Introduction

Thin-film growth on a GaAs(001) surface, either homoepitaxial or heteroepitaxial, has a great technological importance when developing optoelectronic devices. In order to get high quality of film, we must control the surface reconstruction. This is called surface-structure-controlled epitaxy.

Notes for the picture below: top-left is the RHEED image while the bottom-left is the SEM image. The right one is the Topographic filled-state image of the 5×5 reconstructed Ge/Si(111) surface.