Topic 1: How
many point defects are in a material?
Overview
The number of defects in a material is a complex problem, in part
because many defects can occur at low concentrations which makes
characterization or measurement approaches a challenge. Moreover, defect
populations can be affected by temperature, processing conditions, other
defects, and even time. However, as defects affect properties, it may be
possible to connect changes in properties with defect concentrations:
electrical conductivity, positron annihilation rates, material
dimensions, and others that we will see in the class. On the other hand,
computational approaches focus on the determination of basic
thermodynamic quantities, such as the formation energy (and possibly
volume and entropy) of defects, and use defect thermodynamics to predict
defect concentrations.
You may not be surprised to learn that experiment and computation do
not often agree on how many defects are in a material. When you think
about vacancies, how do you measure what isn’t there?
Reading
For this first topic, you will want to read some of the seminal
experimental works, and a recent paper on the computation of
vacancies.
- “Measurements of Equilibrium Vacancy Concentrations in Aluminum.” R.
O. Simmons and R. W. Balluffi, Phys. Rev. 117,
52 (1960): doi:10.1103/PhysRev.117.52
- “Measurements of the High-Temperature Electrical Resistance of
Aluminum: Resistivity of Lattice Vacancies.” R. O. Simmons and R. W.
Balluffi, Phys. Rev. 117, 62 (1960): doi:10.1103/PhysRev.117.62
- Warning: a long review. Should be skimmed to get a feel for what
has been done, and worth skimming the list of papers that cite it:
“Investigation of Thermal Equilibrium Vacancies in Metals by Positron
Annihilation.” H. E. Schaefer, phys. stat. sol. (a)
102, 47 (1987): doi:10.1002/pssa.2211020104
- “Breakdown of the Arrhenius Law in Describing Vacancy Formation
Energies: The Importance of Local Anharmonicity Revealed by Ab initio
Thermodynamics.” A. Glensk, B. Grabowski, T. Hickel, and J. Neugebauer,
Phys. Rev. X 4, 011018 (2014): doi:10.1103/PhysRevX.4.011018
Team assignment
Someone in your group decides she wants to do some experiments for
radiation resistance in Al when it’s alloyed with Sb (1at.%), but she
wants to know what the baseline vacancy concentration should be in her
thin film sample (made via sputtering) without any irradiation. Your
team will decide how to determine the vacancy concentration from room
temperature up to 400C.
- Is there any computational or experimental values that you would
trust?
- If you need additional data, how could you get it?
Prelecture questions
- Intrinsic crystal A is fcc and has a vacancy content given by , with
energies in kJ/mole. Suppose that a second crystal of A contains 1 at.%
of impurity element B, where the A-vacancy binding energy is 16 kJ/mole
with impurities. Assuming for the complexes, what is the total vacancy concentration in
the impure crystal at 1000K?
- When trying to explain the discrepancies between vacancy
concentrations measured experimentally and those estimated
computationally, some authors have suggested that divacancies are
important. Is this reasonable?
- Suppose you had three samples of a pure aluminum. One sample is
heavily cold-worked (high dislocation density), a second sample has a
very fine grain size (typical grain size of 1 micron), and a third
sample is well-annealed over a long time at 80% of the melting
temperature. Assuming you could exactly measure the vacancy
concentration in these three samples, are there temperatures where you
would expect differences in the vacancy concentrations of these three
samples? Where they would be the same? Justify your conclusions.
Suggested background
These may help you think about the papers and questions raised; you
may want to look beyond these, too.
- Course
webnotes:
- Slides (on Google Drive):
- Vacancies and Interstitials
- Complexes
Discussion: Sept. 10-12, 2024