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Subject offerings of new and developing areas of knowledge in electrical and computer engineering intended to augment the existing curriculum. See Class Schedule or departmental course information for topics and prerequisites. Course Information: 0 to 4 undergraduate hours. 0 to 4 graduate hours. May be repeated in the same or separate terms if topics vary.

High Electron Mobility Transistors (HEMTs) and their applications to RF power amplification. Students will learn the fundamentals of compact model development in Verilog-A, simulate HEMTs in Synopsys Sentaurus Device (SDevice) to quantify the DC, transient, and S-parameter response of HEMTs, analyze thermal behaviors of HEMTs and impact on high-frequency performance, and use SDevice simulations to calibrate the compact models, and eventually run large-scale RF simulations in Keysight ADS. The course will introduce students to industry standard modeling and simulation tools, while emphasizing the key physics of high-frequency devices. Guest lectures from technical experts at leading device and circuit simulation software companies will help students connect the dots from theoretical concepts to practical demonstrations of RF devices and circuits.