Fall 2020 441-on-Piazza Compass2g MediaSpace

ECE 441: PHYSICS AND MODELING OF SEMICONDUCTOR DEVICES

Course Overview: This course focuses on the derivation of models for the terminal currents of the semiconductor devices used in integrated circuits: diode, bipolar junction transistor and MOSFET. Our objective will be to represent the device's steady-state response; however, we will also discuss how to extend the models to the transient case. Throughout the semester, we will study semiconductor physics, focusing on topics such as drift and diffusion, generation and recombination, and avalanche multiplication. In the latter part of the semester, we will explore the motivations behind recent modifications to the basic transistor structures, such as the adoption of high-k gate dielectrics for MOSFETs.

Course Expectations and Outcome: I expect students to do the reading before and after class and monitor all email and online communication related to this class. Ultimately, I want the student to enjoy this course and find it relevant in their career goals. Technical outcomes of this course are:

 
Section Time Room Instructor Office Hours Course Logistics Piazza
All

MWF

10:00-10:50 AM

Online

Click here for zoom login information

Shaloo Rakheja

rakheja@illinois.edu

Thurs 1:00-2:00 PM (zoom info here) or by email appointment also on zoom

Check here

Self enroll in Piazza here

I occasionally need to shift my office hours to accommodate prelim exams, research obligations, firm meetings, etc., so always check the class webpage before coming to office hour on any given day. Any changes to my office hours will be listed under "Announcements." on Piazza. Please drop me an email if you want to meet me outside of office hours.

Teaching Assistants: Ankit Shukla (E-mail: ankits4@illinois.edu) (Use Piazza for quicker response)

Course Outline: Specified Here

Course Material: Lecture notes and slides are based on the material from textbook: Device Electronics for Integrated Circuits, 3rd ed. John Wiley & Sons. Authors: Richard S. Muller and Theodore I. Kamins. However, I will be posting extra reading materials, journal articles, discussion pages on as-needed basis. It is the student's responsibility to go through all the posted materials and ask questions if in doubt. There will be some material that is more advanced and posted only for those interested. You will not be quizzed on it, but feel free to come to office hours to discuss advanced material and research ideas based on it. Lectures will be delivered using a mix of hand written notes and powerpoint slides. 

Semiconductor Material Properties: For all HWs and tests, we will use semiconductor material properties given in tables here

Lecture Date Title Lecture Notes (L)/Videos (V) Reading Materials/Notes
Aug 24, 2020 Recap of semiconductor basics--Part I

L1

V1

Logistics
Aug 26, 2020 Recap of semiconductor basics--Part II L2 V2 Gauss' Law
Aug 28, 2020

Fermi-Dirac statistics;

Free carrier density

L3

V3 Supplementary

Reading Material
Aug 31, 2020

Free carrier density continued;

Carrier freezeout

L4

V4

 
Sep 02, 2020

Heavy doping;

Inhomogeneous doping;

Quasi Fermi level

L5

V5 (starts at 3:30 minutes)

Search for bandgap narrowing models in silicon. Example: 

https://www.iue.tuwien.ac.at/phd/palankovski/node39.html

Sep 04, 2020 Generation-recombination introduction

L6 part 1

L6 part 2

V6

 

Sep 09, 2020 Generation-recombination in equilibrium

L7

V7

Non-essential but interesting advanced reading from book 

"Semiconductor Statistics" by J.S. Blakemore

[ISBN 0-486-65362-5, QC611.B52]

Sep 11, 2020 Generation-recombination in out-of-equilibrium (OOE)

L8

V8

Appendix (Must follow the calculation for HW-3)

Derivation of U_trap for Et != Ei

Sep. 14, 2020

Low-level injection;

Extraction/generation

L9

V9

Good discussion on G-R processes can be found in Chapter 5 of "Advanced Semiconductor Fundamentals" by Robert F. Pierret.

Full text available on Hathi Trust Digital Library https://catalog.hathitrust.org/Record/000813863?

You must login using your Illinois credentials.

Sep. 16, 2020 Carrier dynamics in uniform situation

L10

V10

Please revise solving 1st order ODEs.

Sep. 18,

2020

Surface recombination due to traps

L11

V11

Following paper summarizes all our G-R understanding from an experimentalist's perspective:

Schroder, Dieter K. "Carrier lifetimes in silicon." IEEE Transactions on Electron Devices 44.1 (1197): 160-170. https://ieeexplore.ieee.org/document/554806

Sep. 21

2020

Introduction to carrier transport

L12

V12

Optional read: Concept of phonons and velocity saturation 

Sep. 23

2020

Carrier drift 

Models of mobility and saturation velocity

L13

V13

Following paper catalogues important models to be used in drift diffusion modeling of silicon:

Jacoboni, C., Canali, C., Ottaviani, G., & Quaranta, A. A. (1977). A review of some charge transport properties of silicon. Solid-State Electronics20(2), 77-89. https://doi.org/10.1016/0038-1101(77)90054-5 

Sep. 25

2020

Carrier diffusion

Current in terms of quasi Fermi level gradient

Non-uniform doping

L14

V14

 

Sep. 28

2020

Carrier distribution in equilibrium

Boltzmann relations

L15

V15

 

Sep. 30

2020

Quasi neutrality condition

L16

V16

 

Oct. 02

2020

Continuity equations (volume ad surface)

L17

V17

 

Homework: Will be assigned on Piazza under Resources and Compass2g.

HW Link to HW Due Date Solution
1 Homework 1 Sep. 06 HW Sol-1
2 Homework 2 Sep. 13 HW-Sol-2
3 Homework 3 Sep. 20 HW-Sol-3
4 Homework 4 Sep. 27 HW-Sol-4
5 Homework 5 Sep. 28 HW-Sol-5

Exams: Two midsemester exams and one final exam. Exam dates: October 05, 2020 (midsem exam 1),  November 09 (midsem exam 2). 

Exams will be held online via zoom from 5:00 PM to 7:00 PM. Details to connect via zoom will be emailed to all students.

Final exam details will be released later. 

Grading Policy:

Homework 25% of total
Midsemester Exams

45% of total

(22.5% each midterm exam)

Final Exam (comprehensive) 30% of total

I encourage active participation in class/online on Piazza. Please ask questions and doubts as often as necessary.